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Correlation learning rule in floating-gate pFET synapses

机译:浮栅pFET突触中的相关学习规则

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We study the weight dynamics of the floating-gate pFET synapse andnthe effects of the pFET's gate and drain voltages on these dynamics. Wenshow that we can derive a weight update rule such that the equilibriumnweight value is proportional to the correlation between the gate andndrain voltages. In particular, we want a rule of the form Τ'nΔW˙=-ΔW+ΗE[xy], where x is a voltage signal on thengate terminal and y is a voltage signal on the drain terminal. We obtainnthis rule by making a linear approximation to the weight dynamics aroundna given equilibrium point. We develop this approximation by consideringnthe basic functional form of the system dynamics and then examining theneffects of the gate and drain voltages on the specifics of this form
机译:我们研究了浮栅pFET突触的重量动态,以及pFET的栅极和漏极电压对这些动态的影响。 Wenshow指出,我们可以得出权重更新规则,以使均衡权重值与栅极电压和漏极电压之间的相关性成正比。特别地,我们想要规则为T'nΔW&=-ΔW+ HE [xy],其中x是栅极端子上的电压信号,y是漏极端子上的电压信号。我们通过对给定平衡点附近的重量动态进行线性近似来获得该规则。我们通过考虑系统动力学的基本功能形式,然后研究栅极和漏极电压对该形式细节的影响,来开发这种近似方法。

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