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An Area-Efficient Current-Mode Bandgap Reference With Intrinsic Robust Start-Up Behavior

机译:具有固有鲁棒启动行为的区域有效电流模式带隙基准

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During mass production, bandgap reference failure can cause chip failure, resulting in yield loss. A bandgap reference with robust start-up behavior is therefore needed. In this brief, the issue of multiple operating points is examined, along with a prior art low-voltage current-mode bandgap reference (CMBGR) structure. A CMBGR structure with only two stable operating points is proposed, which can be reliably started up with a very simple pulse generator circuit and a power-up signal. The bandgap reference is implemented in 40-nm technology, achieving a 41.5-ppm/°C nominal temperature coefficient. The current consumption is 40 and the active area is 0.0094 mm .
机译:在批量生产期间,带隙基准电压故障会导致芯片故障,从而导致良率损失。因此,需要具有强大启动性能的带隙基准。在本简介中,研究了多个工作点的问题以及现有技术的低压电流模式带隙基准(CMBGR)结构。提出了仅具有两个稳定工作点的CMBGR结构,可以通过非常简单的脉冲发生器电路和上电信号来可靠地启动它。带隙基准采用40纳米技术实现,可实现41.5-ppm /°C的标称温度系数。电流消耗为40,有效面积为0.0094 mm。

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