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首页> 外文期刊>Circuits and Systems II: Express Briefs, IEEE Transactions on >A 0.45-V, 14.6-nW CMOS Subthreshold Voltage Reference With No Resistors and No BJTs
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A 0.45-V, 14.6-nW CMOS Subthreshold Voltage Reference With No Resistors and No BJTs

机译:没有电阻和BJT的0.45V,14.6nW CMOS亚阈值电压基准

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We present a low-voltage low-power CMOS subthreshold voltage reference with no resistors and no bipolar junction transistors in a wide temperature range. The temperature stability is improved by second-order compensation. By employing a bulk-driven technique and the MOS transistors working in the subthreshold region, the supply voltage and the power dissipation are reduced. Moreover, a trimming circuit is adopted to compensate for the process-related reference voltage variation. The proposed voltage reference has been fabricated with the 0.18- 1.8-V CMOS process. The measurement results show that the minimum power supply voltage is 0.45 V, the power consumption is 14.6 nW, the average temperature coefficient measured from to 125 °C is 63.6 ppm/°C, and the line regulation is 1.2 mV/V in the power supply voltage ranging from 0.45 to 1.8 V. In addition, the chip area is 0.012 mm.
机译:我们提供了在宽温度范围内没有电阻且没有双极结型晶体管的低压低功率CMOS亚阈值电压基准。通过二阶补偿提高了温度稳定性。通过采用体驱动技术并且MOS晶体管在亚阈值区域中工作,降低了电源电压和功耗。此外,采用微调电路来补偿与过程有关的参考电压变化。拟议的基准电压源采用0.18- 1.8V CMOS工艺制造。测量结果表明,最小电源电压为0.45 V,功耗为14.6 nW,从到125°C测得的平均温度系数为63.6 ppm /°C,电源中的线路调整率为1.2 mV / V。电源电压范围为0.45至1.8V。此外,芯片面积为0.012 mm。

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