Cheating The Diffraction Limit: Electrodeposited Nanowires Patterned By Photolithography

摘要

The diffraction limit, d ≈λ/2, constrains the resolution with which structures may be produced using photolithography. Practical limits for d are in the 100 nm range. To circumvent this limit, photolithography can be used to fabricate a sacrificial electrode that is then used to initiate and propagate the growth by electrodeposition of a nanowire. We have described a version of this strategy in which the sacrificial electrode delimits one edge of the nascent nanowire, and a microfabricated "ceiling" constrains its height during growth. The width of the nanowire is determined by the electrochemical deposition parameters (deposition time, applied potential, and solution composition). Using this method, called lithographically patterned nanowire electrodeposition (LPNE), nanowires with minimum dimensions of 11 nm (w) × 5 nm (h) have been obtained. The lengths of these nanowires can be wafer-scale. LPNE has been used to synthesize nanowires composed of bismuth, gold, silver, palladium, platinum, and lead telluride.