METHOD OF FORMING FINE PATTERN OF LIMIT RESOLUTION OR LESS OF PHOTOLITHOGRAPHY

摘要

PURPOSE: To form a pattern finer than the limit resolution using an existing photolithography technology by making a trench in the vicinity of the surface of a photoresist at an exposed part, filling the trench with an anti-etching material and then etching the photoresist using the anti-etching material as a mask. CONSTITUTION: A substance 10 to be etched is coated with a photoresist 11 which is then exposed through a mask 15 on which a pattern is formed at a line width and an interval finer than the limit resolution of the photoresist 11. It is then developed and a shallow trench 13 is made in the vicinity of the surface of the photoresist 11 only at the exposed part. Subsequently, the trench 13 is filled with an anti-etching material 12 exhibiting high resistance against oxygen ion reactive etching before the photoresist 11 is subjected to oxygen ion reactive etching using the anti-etching material 12 as a mask. Finally, the substance 10 is etched using a pattern of the photoresist 11 formed by the etching step as an etching mask.