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Impact of the structural properties of holmium doped ZnO thin films grown by sol-gel method on their optical properties

机译:溶胶法在光学性质上生长钬掺杂ZnO薄膜结构性能的影响

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摘要

Polycrystalline Ho (1, 3, 5 at %) doped ZnO thin films were prepared by sol-gel method. The films show a pure wurtzite crystalline structure. The particle size decreases from 29 to 9 nm when the Ho concentration increases from 0 to 5 at %. They present a homogeneous morphology for the specimens containing 1 and 3 at % of Ho. At 5 at % Ho the morphology of the film changes and the particles agglomerate in larger clusters. The UV-Vis transmission was found higher than 70% and a decreasing of the band gap from 3.28 to 3.22 eV was observed with the increase of the Ho concentration. The F-5(5)- I-5(8) Ho transition at similar to 662 nm can be easily identified in the photoluminescence (PL) spectra, using an UV excitation source. A combined analysis of the photoluminescence properties at the room temperature and of the morphological and structural characteristics of the films allows us to directly link the Ho emission to the Ho incorporation in ZnO matrix.
机译:通过溶胶 - 凝胶法制备多晶HO(1,3,5at%)掺杂的ZnO薄膜。 这部电影显示纯纯晶岩晶体结构。 当HO浓度从0到5at%增加时,粒度从29℃降低到9nm。 它们为含有1和3%的含量的标本呈现均匀形态。 在5at 5at以%Ho的膜的形态变化和较大簇中的颗粒凝聚。 发现UV-VIS透射率高于70%,随着呼应浓度的增加,观察到从3.28到3.22eV的带隙的降低。 F-5(5) - & 使用UV激励源,可以在光致发光(PL)光谱中可以容易地识别类似于662nm的I-5(8)HO转换。 在室温和薄膜的形态学和结构特征中的光致发光性能的组合分析使我们能够直接将呼吸掺入ZnO基质中的HO掺入。

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  • 来源
    《Applied Surface Science》 |2021年第1期|150159.1-150159.10|共10页
  • 作者单位

    Babes Bolyai Univ Fac Chem & Chem Engn Arany Janos 11 Cluj Napoca 400028 Romania|Univ Strasbourg Inst Phys & Chim Mat Strasbourg IPCMS CNRS UMR 7504 23 Rue Loess BP 43 F-67034 Strasbourg 2 France;

    Babes Bolyai Univ Fac Chem & Chem Engn Arany Janos 11 Cluj Napoca 400028 Romania;

    Univ Strasbourg Inst Phys & Chim Mat Strasbourg IPCMS CNRS UMR 7504 23 Rue Loess BP 43 F-67034 Strasbourg 2 France;

    Univ Strasbourg Inst Phys & Chim Mat Strasbourg IPCMS CNRS UMR 7504 23 Rue Loess BP 43 F-67034 Strasbourg 2 France;

    Univ Strasbourg Inst Phys & Chim Mat Strasbourg IPCMS CNRS UMR 7504 23 Rue Loess BP 43 F-67034 Strasbourg 2 France;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Ho doped ZnO; Thin films; Photoluminescence;

    机译:何掺杂ZnO;薄膜;光致发光;

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