Nanostructure patterning of C-Sb_2Te_3 by maskless thermal lithography using femtosecond laser pulses

摘要

Thermal lithography is an alternative technique that can fabricate patterns beyond the diffraction limit. In thermal lithography, it is hard to obtain morphology on demand due to the difficulty in controlling thermal diffusion caused by the long laser pulses. To address this issue, enhanced thermal lithography with multiple femtosecond laser pulse exposure is proposed in this paper. C-Sb2Te3 (CST), a fine-tunable phase change material, is used as a negative heat-mode resist for the first time. The resolution and steepness of the microstructure prepared by this method are obviously enhanced compared with the conventional way. The height of the wetetched microstructures can be preciously adjusted by tuning the exposure dose of femtosecond laser pulses. Microstructure and thermal field analysis results reveal the origin of the high resolution and fine-tuning. CST-based phase-change memory cell arrays were fabricated with this method to confirm the feasibility and advantage. This work provides an effective way to achieve enhanced thermal lithography in the manufacturing of microanostructure-based electronic and photonic devices.