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Effects of ZnO buffer layer thickness on properties of ZnO thin films deposited by radio-frequency magnetron sputtering

机译:ZnO缓冲层厚度对射频磁控溅射沉积ZnO薄膜性能的影响

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A series of ZnO films were deposited on c-plane sapphire substrates having different buffer layer thicknesses between 50 and 500 Angstrom by radio-frequency (rf) magnetron sputtering. Scanning electron microscopy (SEM) was utilized to investigate the surface morphology of ZnO films. T he crystallinity of ZnO films was investigated by the double-crystal X-ray diffractometry (DCXRD). The optical properties of ZnO films were also investigated using low-temperature (LT) photoluminescence (PL). It was found that the surface morphology, structural and optical properties of the films depended on the thickness of the buffer layer. The films deposited on the 100 Angstrom thick ZnO buffer layer exhibit the good structural and optical properties with a very smooth surface. (C) 2003 Elsevier Science B.V. All rights reserved. [References: 23]
机译:通过射频(rf)磁控管溅射将一系列ZnO膜沉积在c面蓝宝石衬底上,该衬底的缓冲层厚度在50到500埃之间。利用扫描电子显微镜(SEM)研究ZnO薄膜的表面形貌。 ZnO薄膜的结晶度通过双晶X射线衍射法(DCXRD)进行了研究。还使用低温(LT)光致发光(PL)研究了ZnO薄膜的光学特性。发现膜的表面形态,结构和光学性质取决于缓冲层的厚度。沉积在100埃厚ZnO缓冲层上的薄膜具有良好的结构和光学特性,表面非常光滑。 (C)2003 Elsevier Science B.V.保留所有权利。 [参考:23]

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