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Influence of the substrate surface termination on the properties of bcc-cobalt films: GaAs(110) versus Sb/GaAs(110)

机译:基板表面终止对bcc钴膜性能的影响:GaAs(110)与Sb / GaAs(110)

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Reflection high energy electron diffraction (RHEED) and synchrotron radiation photoemission spectroscopy (SRPES) have been used to investigate the evolution of the crystallinity and interface reaction of Co thin films deposited on Sb/GaAs(1 1 0). The RHEED images have allowed us to qualitative observe an improvement of the Co bee crystal structure compared to the deposition on the bare substrate. Additionally, the use of high energy resolution synchrotron radiation photoemission spectroscopy has shown that the interdiffusion process behaves differently from that observed for the non-passivated surface. (C) 2004 Published by Elsevier B.V.
机译:反射高能电子衍射(RHEED)和同步辐射电子发射光谱(SRPES)已用于研究沉积在Sb / GaAs(1 1 0)上的Co薄膜的结晶度和界面反应。与在裸衬底上沉积相比,RHEED图像使我们能够定性地观察到Co蜂晶体结构的改善。另外,使用高能量分辨率同步加速器辐射光发射光谱法已经表明,互扩散过程的行为与非钝化表面所观察到的不同。 (C)2004由Elsevier B.V.发布

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