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首页> 外文期刊>Applied Surface Science >A transmission electron microscope study of metal/chalcogenide amorphous thin films
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A transmission electron microscope study of metal/chalcogenide amorphous thin films

机译:金属/硫族化物非晶薄膜的透射电子显微镜研究

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Thin bilayer films of Cu/a-GeSe2 and Ag/a-GeSe have been studied in the transmission electron microscope (TEM) for different metal concentrations. It has been observed that samples of Cu/a-GeSe2 crystallise locally when the electron beam is fully focused in a particular region. It is also found that it is possible to pattern regions of crystallized and non-crystallized material. The increase in copper concentration in Cu/a-GeSe2 samples increases the sensitivity of these thin films to the electron beam. In the case of Ag/a-GeSe samples, we have observed that electron beam irradiation results in the migration of silver away from electron irradiated regions. The depletion of silver has been confirmed by energy dispersive X-ray (EDX) microanalysis. It has been observed that silver tends to accumulate in the surrounding non-irradiated regions forming dendritic silver filaments, the number and velocity of formation of these filaments increases with increase in electron dose. The phenomenon is fully reversible and by placing the electron beam on a silver filament, it is possible to observe how the filament dissolves to leave a region depleted of silver. Additionally, small particles of nanometric size have been observed to grow naturally on Ag/a-GeSe thin films on samples supported on NaCl and silicon substrates. (C) 2004 Published by Elsevier B.V.
机译:在透射电子显微镜(TEM)中已经研究了Cu / a-GeSe2和Ag / a-GeSe双层薄膜的不同金属浓度。已经观察到,当电子束完全聚焦在特定区域中时,Cu / a-GeSe2的样品局部结晶。还发现可以对结晶的和非结晶的材料的区域进行图案化。 Cu / a-GeSe2样品中铜浓度的增加增加了这些薄膜对电子束的敏感性。在Ag / a-GeSe样品的情况下,我们已经观察到电子束辐照导致银从电子辐照区域迁移。银的耗竭已通过能量色散X射线(EDX)微观分析得到了证实。已经观察到银趋于在形成树枝状银丝的周围非辐照区域中积累,这些丝的形成的数量和速度随着电子剂量的增加而增加。这种现象是完全可逆的,并且通过将电子束放在银丝上,可以观察到丝如何溶解而剩下一个耗尽银的区域。另外,已经观察到纳米尺寸的小颗粒在载于NaCl和硅衬底上的样品上的Ag / a-GeSe薄膜上自然生长。 (C)2004由Elsevier B.V.发布

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