Study Of Electronic Structures For Fe Thin Films Deposited On si- And C-faces Of 4h-sic Substrates By Soft x-ray Emission Spectroscopy

摘要

Silicon carbide (SiC) is a candidate material for electronic devices to operate upon crucial environment. Electronic states of silicides and/or carbide/graphite formed in metal/SiC contact system are fundamentally important from the viewpoint of device performance. We study interface electronic structure of iron thin film deposited on silicon (Si)- and carbon (C)-face of 4H-SiC(0001) by using a soft X-ray emission spectroscopy (SXES). For specimens of Fe (50 nm)/4H-SiC (substrate) contact systems annealed at 700 and 900 ℃, the Si L_(2,3) emission spectra indicate different shapes and peak energies from the substrate depending on thermal-treated temperature. The product of materials such as silicides is suggested. Further, from comparison of Si L_(2,3) emission spectra between Si- and C-face for the same annealing temperature at 700 ℃, it is concluded that the similar silicides and/or ternary materials are formed on the two surfaces. However for those of 900 ℃, the film on substrate is composed of the different silicide and/or ternary materials.