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Ti-Cu-N hard nanocomposite films prepared by pulse biased arc ion plating

机译:脉冲偏压电弧离子镀制备的Ti-Cu-N硬质纳米复合薄膜

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In this work, Ti-Cu-N hard nanocomposite films were deposited on high-speed-steel (HSS) substrates using a TiCu (88:12 at.%) single multi-component target by pulse biased arc ion plating. The influence of pulse bias voltages was examined with regard to elemental composition, structure, morphology and mechanical properties of the films. The Cu atomic content of Ti-Cu-N films was determined by Electron Probe Micro-Analyzer (EPMA). The structure and morphology were examined by X-ray diffraction (XRD) and scanning electron microscopy (SEM). Hardness and film/substrate adhesion were determined by nanoindenter and scratch test, respectively. The results showed that the content of Cu appeared to be in the range of 1.75-4.5 at.%, depending on pulse bias voltages. The films exhibit a preferred orientation TiN (111) texture when the substrate bias voltages were -100 V and -300 V, while the preferred orientation change to be a preferred orientation TiN (2 2 0) one when the substrate bias voltages increase to -600 V and -900 V. And no obvious sign of metal copper phase was observed. The SEM morphologies showed some macroparticles (MPs) on the surface of the films and the relative content of the MPs decreased significantly when the substrate bias voltages increased from -100 to -900 V. The maximum value (74 N) of the film/substrate adhesion of the films was obtained when the substrate bias voltage was -600 V with Cu content of 1.75 at.%. Hardness enhancement was observed, the value of the hardness increased firstly and reached a maximum value of 31.5 GPa, corresponding to Cu content of 1.75 at.%, and then it decreased when the substrate bias voltage changed from -100 to -900 V. The hardness enhancement was discussed related to the concept for the design of hard materials.
机译:在这项工作中,使用TiCu(88:12 at。%)单一多组分靶材,通过脉冲偏压电弧离子镀将Ti-Cu-N硬纳米复合材料膜沉积在高速钢(HSS)基底上。考察了脉冲偏压对膜的元素组成,结构,形态和机械性能的影响。 Ti-Cu-N薄膜中的铜原子含量通过电子探针微分析仪(EPMA)确定。通过X射线衍射(XRD)和扫描电子显微镜(SEM)检查结构和形态。硬度和膜/基材的粘附力分别通过纳米压头和划痕试验确定。结果表明,取决于脉冲偏压,Cu的含量似乎在1.75-4.5at。%的范围内。当衬底偏置电压为-100 V和-300 V时,这些膜表现出优选的取向TiN(111)织构,而当衬底偏置电压增加至-时,优选的取向变为优选的取向TiN(2 2 0)。 600 V和-900V。并且没有观察到明显的金属铜相迹象。 SEM形貌显示,当基底偏置电压从-100 V增加到-900 V时,薄膜表面存在一些大颗粒(MPs),MP的相对含量显着降低。薄膜/基底的最大值(74 N)当衬底偏置电压为-600 V,Cu含量为1.75 at。%时,可获得薄膜的附着力。观察到硬度增强,硬度值首先增加并达到最大值31.5 GPa,对应于1.75 at。%的Cu含量,然后在基底偏置电压从-100变为-900 V时降低。讨论了与硬质材料设计概念有关的硬度提高。

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