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Effect of surface roughness on nucleation and growth of vanadium pentoxide nanowires

机译:表面粗糙度对五氧化二钒纳米线成核和生长的影响

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The effect of surface roughness on subsequent growth of vanadium pentoxide (V_2O_5) nanowires is examined. With increasing surface roughness, both the number density and aspect ratio of V_2O_5 nanowires increase. Structures and morphology of obtained nanowires were characterized by field emission scanning electron microscopy (FE-SEM) and X-ray diffraction (XRD). The nanowires are approximately 40-90 nm in diameter and 2 μm in length. X-ray diffraction (XRD) analysis indicates that the obtained nanowires are orthorhombic structure with (001) out-of-plane orientation. The luminescence property of V_2O_5 nanowires has been investigated by photoluminescence (PL) at 150 K and 300 K. PL results show intense visible emission, which is attributed to different inter-band transitions between the V 3d and O 2p band. This simple fabrication approach might be useful for fabrication of large area V_2O_5 nanowires arrays with high density.
机译:研究了表面粗糙度对五氧化二钒(V_2O_5)纳米线后续生长的影响。随着表面粗糙度的增加,V_2O_5纳米线的数量密度和纵横比均增加。通过场发射扫描电子显微镜(FE-SEM)和X射线衍射(XRD)表征获得的纳米线的结构和形态。纳米线的直径约为40-90 nm,长度约为2μm。 X射线衍射(XRD)分析表明,所获得的纳米线是具有(001)面外取向的正交结构。 V_2O_5纳米线的发光特性已经通过150 K和300 K的光致发光(PL)进行了研究。PL结果显示出强烈的可见光发射,这归因于V 3d和O 2p带之间的不同带间跃迁。这种简单的制造方法可能对制造具有高密度的大面积V_2O_5纳米线阵列有用。

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