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Structural, optical and electrical properties of Cd-doped SnO_2 thin films grown by RF reactive magnetron co-sputtering

机译:射频反应磁控共溅射Cd掺杂SnO_2薄膜的结构,光学和电学性质

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Transparent conducting SnO_2:Cd thin films were prepared by RF reactive magnetron co-sputtering on glass slides at a substrate temperature of 500 ℃ using CdO as cadmium source. The films were deposited under a mixed argon/oxygen atmosphere. The structural, optical and electrical properties were analyzed as a function of the Cd amount in the target. The X-ray diffraction shows that polycrystalline films were grown with both the tetragonal and orthorhombic phases of SnO_2. The obtained films have high transmit-tance and conductivity. The figure of merit of SnO_2 :Cd films are in the order of 10~(-3) Ω~(-1), which suggests that these films can be considered as candidates for transparent electrodes.
机译:以CdO为镉源,在500℃的载玻片上进行RF反应磁控溅射制备透明导电SnO_2:Cd薄膜。将膜在氩/氧混合气氛下沉积。根据靶中Cd量的函数分析了结构,光学和电学性质。 X射线衍射表明,多晶体膜生长具有SnO_2的四方相和正交相。所得膜具有高透射率和导电性。 SnO_2:Cd薄膜的品质因数约为10〜(-3)Ω〜(-1),这表明这些薄膜可以作为透明电极的候选。

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