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Catalyst-assisted vertical growth of carbon nanotubes on Inconel coated commercial copper foil substrates versus sputtered copper films

机译:与溅射铜膜相比,在因科镍合金涂覆的商用铜箔基材上催化剂辅助的碳纳米管垂直生长

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We have compared the growth of multi-walled carbon nanotubes using thermal chemical vapor deposition (CVD) on two types of substrates, copper foils and sputtered copper films. In both cases an initial 12 nm thin film of Inconel is first deposited on the Cu before growing the nanotubes. The Inconel thin film can act as both a catalyst for nanotube growth as well as a support for the additional Fe catalyst that is supplied in the form of ferrocene during CVD growth. The surfaces of the underlying copper substrates are very different and play a role in the resulting carbon nanotube density. A quantitative analysis of the density and alignment of the resulting carbon nanotubes using scanning electron microscopy shows that the smooth surface of the sputtered copper substrate leads to improvement in vertical growth and density of nanotubes as opposed to the much rougher electropolished Cu foil. We show that this is related to the differences in catalyst islands distributions and graphitic crystallinity seen on the surfaces of the two types of substrates after heating the samples in the CVD chamber. This demonstrates that the surface of the starting substrate plays an important role in the subsequent catalyst surface distribution and therefore the resulting nanotube density.
机译:我们比较了在两种类型的基板(铜箔和溅射铜膜)上使用热化学气相沉积(CVD)来生长多壁碳纳米管的情况。在这两种情况下,Inconel的初始12 nm薄膜都首先沉积在Cu上,然后再生长纳米管。 Inconel薄膜既可以用作纳米管生长的催化剂,又可以作为额外的Fe催化剂的载体,该催化剂在CVD生长期间以二茂铁形式提供。下层铜基板的表面非常不同,并在最终的碳纳米管密度中发挥作用。使用扫描电子显微镜对所得碳纳米管的密度和取向进行定量分析表明,与电抛光铜箔相比,溅射铜基板的光滑表面可改善纳米管的垂直生长和密度。我们表明,这与在CVD室中加热样品后在两种类型的基板表面上看到的催化剂岛分布和石墨结晶度的差异有关。这表明起始底物的表面在随后的催化剂表面分布以及因此产生的纳米管密度中起重要作用。

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