Effects of Si doping on the strain relaxation of metamorphic (Al)GalnP buffers grown on GaAs substrates

摘要

We investigate the effects of Si doping on the strain relaxation of the compositionally step-graded (Al)GalnP buffers grown by metal-organic chemical vapor deposition on (001) GaAs substrates with different miscuts toward (111 )A. It is found that in the 2° samples, high Si doping can reduce both the a and p dislocation densities by delaying and suppressing the formation of phase separation in the buffer. In contrast, in the 7° samples. Si dopants deteriorate the buffer quality through increasing the dislocation density accompanying with the tilt reduction along the [11 0] direction, and a striking feature, bunches of β dislocations away from the interfaces, is observed in the [110] cross-sectional transmission electron microscopy images. A cross-slip mechanism closely associated with the pinning effect of Si on α dislocation motion is proposed to explain the multiplication of β dislocations. These results indicate that selecting a moderate Si doping density and substrate miscut are critical for the design and fabrication of metamorphic optoelectronic devices.