机译:通过金属有机化学气相沉积法生长的Fe3O4 / Ga2O3 / GaN自旋注入异质结构的组成,结构和磁性
Nanjing Univ, Nanjing Natl Lab Microstruct, Nanjing 210023, Jiangsu, Peoples R China|Nanjing Univ, Sch Elect Sci & Engn, Nanjing 210023, Jiangsu, Peoples R China;
Nanjing Univ, Nanjing Natl Lab Microstruct, Nanjing 210023, Jiangsu, Peoples R China|Nanjing Univ, Sch Elect Sci & Engn, Nanjing 210023, Jiangsu, Peoples R China;
Nanjing Univ, Nanjing Natl Lab Microstruct, Nanjing 210023, Jiangsu, Peoples R China|Nanjing Univ, Sch Elect Sci & Engn, Nanjing 210023, Jiangsu, Peoples R China;
Nanjing Univ, Nanjing Natl Lab Microstruct, Nanjing 210023, Jiangsu, Peoples R China|Nanjing Univ, Sch Elect Sci & Engn, Nanjing 210023, Jiangsu, Peoples R China;
Nanjing Univ, Nanjing Natl Lab Microstruct, Nanjing 210023, Jiangsu, Peoples R China|Nanjing Univ, Sch Elect Sci & Engn, Nanjing 210023, Jiangsu, Peoples R China;
Nanjing Univ, Nanjing Natl Lab Microstruct, Nanjing 210023, Jiangsu, Peoples R China|Nanjing Univ, Sch Elect Sci & Engn, Nanjing 210023, Jiangsu, Peoples R China|Nanjing Univ, Inst Optoelect Yangzhou, Yangzhou 225009, Jiangsu, Peoples R China;
Southeast Univ, Dept Phys, Nanjing 210096, Jiangsu, Peoples R China;
Nanjing Univ, Nanjing Natl Lab Microstruct, Nanjing 210023, Jiangsu, Peoples R China|Nanjing Univ, Sch Elect Sci & Engn, Nanjing 210023, Jiangsu, Peoples R China;
Nanjing Univ, Nanjing Natl Lab Microstruct, Nanjing 210023, Jiangsu, Peoples R China|Nanjing Univ, Sch Elect Sci & Engn, Nanjing 210023, Jiangsu, Peoples R China;
Fe3O4; Ga2O3; GaN; MOCVD; Spintronics;
机译:Ⅲ族源预流对金属有机化学气相沉积在氮化蓝宝石衬底上生长的GaN的极性,光学和结构性能的影响
机译:金属有机化学气相沉积在蓝宝石衬底上生长的低Al成分p-GaN / Mg掺杂Al0.15Ga0.85N / n + sup> -GaN异质结中的负微分电阻
机译:在蓝宝石衬底上通过金属有机化学气相沉积法生长的低Al成分p-GaN / Mg掺杂Al_(0.15)Ga_(0.85)N / n〜+ -GaN异质结中的负微分电阻
机译:通过金属有机化学气相沉积法生长的GaN / sub 1-x / P / sub x /三元合金的结构性质
机译:通过常压金属有机化学气相沉积法沉积的氮化铝薄膜的电,结构和光学性质。
机译:通过金属有机化学气相沉积法在c面GaN衬底上生长的富铝AlInN的结构特性
机译:通过金属有机化学气相沉积法在c面GaN衬底上生长的富铝AlInN的结构特性
机译:有机金属化学气相沉积mg掺杂GaN外延层的磁共振研究2。杂志文章