Dielectric and ferroelectric properties of (111) preferred oriented PbZr0.53Ti0.47O3/Pb(Mg1/3Nb2/3)(0.62)Ti0.38O3/PbZr0.53Ti0.47O3 trilayered films

摘要

Highly (111) preferred oriented PbZr0.53Ti0.47O3/Pb(Mg1/3Nb2/3)(0.62)Ti0.38O3/PbZr0.53Ti0.47O3 (PZT/PMNT/PZT) trilayered ferroelectric thin films were prepared on (111)Pt/Ti/SiO2/Si substrates. At room temperature, the films have a dielectric constant of 2175 that decreases to 1870 and a dielectric loss of 0.05 that increases to 0.06 with increasing frequency between 10(2) and 10(5) Hz. Also, they exhibit well saturated polarization-versus-electric field hysteresis loops with a large remnant polarization of 13.4 mu L/cm(2) and a low coercive field of 30 kV/cm. The leakage current density in the trilayered films is 4.1 x 10(-10) A/cm(2), which increases to 4.0 x 10(-7) A/cm(2) with increasing electric field between 1 and 140 kV/cm. Such properties of (111) preferred oriented PZT/PMNT/PZT trilayered films lead naturally to possibilities for ferroelectric capacitors and memories. (C) 2016 Elsevier B.V. All rights reserved.