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Spectroscopic ellipsometry studies on ZnCdO thin films with different Cd concentrations grown by pulsed laser deposition

机译:椭圆激光光谱法研究不同Cd浓度的ZnCdO薄膜的脉冲激光沉积

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摘要

Graphical abstract Display Omitted Highlights The variable angle ellipsometry data were measured for Zn1-xCdxO (x=0.05,0.10). VASE shows a red shift in the absorption edge with increasing Cd contents. Temperature-dependent spectroscopic ellipsometry were studied from 25°C to 600°C. Have obtained the optical constants and band gaps of Zn0.95Cd0.05O film by TDSE. Abstract A set of Zn1-xCdxO thin films with different Cd concentrations was deposited on quartz substrates by Pulsed Laser Deposition (PLD). The properties of these films were investigated by variable angle and temperature dependent spectroscopic ellipsometry (SE). The experimental Zn1-xCdxO thin films showed a red shift in the absorption edge with increasing Cd contents at room temperature. For ZnCdO films with the similar Cd concentration, it has been found that the film thickness has important effects on the optical constants (n, k). The variations of optical constants (n, k) and the band gap, E0, with temperature (T) in 25°C–600°C for a typical Zn0.95Cd0.05O sample were obtained. The E0 vs T relationship is described by a T- quadratic equation.
机译: 图形摘要 < ce:simple-para id =“ spar0050” view =“ all” /> 省略显示 突出显示 < ce:para id =“ par0005” view =“ all”>使用可变角度椭圆仪数据进行了测量或Zn 1-x Cd x O(x = 0.05,0.10)。 VASE显示,随着Cd含量的增加,吸收边发生红移。 与温度相关的椭圆偏振光谱研究是从25 < ce:hsp sp =“ 0.25” />°C到600 °C。 已获得Zn 0.95 Cd 0.05 O膜 摘要 一组Zn 1-x Cd x O薄膜沉积在石英基板上。通过可变角度和温度相关的椭圆偏振光谱法(SE)研究了这些薄膜的性能。实验的Zn 1-x Cd x O薄膜在吸收方面呈现红移室温下,随着Cd含量的增加边缘会增加对于具有相似Cd浓度的ZnCdO薄膜,已经发现薄膜厚度对光学常数( n,k )有重要影响。光学常数( n,k )和带隙E 0 随温度( T )在25 °C–600 °C中,对于典型的Zn 0.95 Cd 0.05 O样品。 E 0 与T的关系由 T -二次方程式描述。

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  • 来源
    《Applied Surface Science》 |2017年第ptab期|383-388|共6页
  • 作者单位

    Laboratory of optoelectronic materials & detection technology, Guangxi Key Laboratory for the Relativistic Astrophysics, College of Physics Science & Technology, Guangxi University;

    Laboratory of optoelectronic materials & detection technology, Guangxi Key Laboratory for the Relativistic Astrophysics, College of Physics Science & Technology, Guangxi University;

    Department of Electrical and Computer Engineering, Missouri University of Science & Technology;

    Laboratory of optoelectronic materials & detection technology, Guangxi Key Laboratory for the Relativistic Astrophysics, College of Physics Science & Technology, Guangxi University;

    Laboratory of optoelectronic materials & detection technology, Guangxi Key Laboratory for the Relativistic Astrophysics, College of Physics Science & Technology, Guangxi University;

    Laboratory of optoelectronic materials & detection technology, Guangxi Key Laboratory for the Relativistic Astrophysics, College of Physics Science & Technology, Guangxi University;

    State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University;

    State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Spectroscopic ellipsometry; Variable temperature; Optical constants; Bandgap;

    机译:椭圆偏振光谱法;可变温度;光学常数;带隙;

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