Electronic characteristics of p-type transparent SnO high carrier mobility monolayer with high carrier mobility

摘要

More recently, two-dimensional (2D) SnO nanosheets are attaching great attention due to its excellent carrier mobility and transparent characteristics. Here, the stability, electronic structures and carrier mobility of SnO monolayer are investigated by using first-principles calculations. The calculations of the phonon dispersion spectra indicate that SnO monolayer is dynamically stable. Moreover, the band gap values are decreased from 3.93 eV to 2.75 eV when the tensile strain is applied from 0% to 12%. Interestingly, SnO monolayer is a p-type transparent semiconducting oxide with hole mobility of 641 cm(2) V-1 s(-1), which is much higher than that of MoS2 monolayer. These findings make SnO monolayer becomes a promising 2D material for applications in nanoelectronic devices. (C) 2017 Elsevier B.V. All rights reserved.