Superconducting junctions using 2DEG in a stained InAs quantum well inserted into an InAiAs/InGaAs MD structure

Akazaki T.; Nitta J.

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Superconducting junctions using 2DEG in a stained InAs quantum well inserted into an InAiAs/InGaAs MD structure

机译：在插入InAiAs / InGaAs MD结构的InAs染色量子阱中使用2DEG进行超导结

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《IEEE Transactions on Applied Superconductivity》 |1995年第1995期|共页
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Akazaki T.; Nitta J.;
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种 eng
中图分类超导体、超导体材料;半导体技术;
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专利

1. Superconducting junctions using a 2DEG in a strained InAs quantum well inserted into an InAlAs/InGaAs MD structure [J] . Akazaki T., Nitta J. IEEE Transactions on Applied Superconductivity . 1995,第2期

机译：在插入InAlAs / InGaAs MD结构的应变InAs量子阱中使用2DEG进行超导结
2. Superconducting junctions using a 2DEG in a strained InAs quantum well inserted into an InAlAs/InGaAs MD structure [J] . Akazaki T., Nitta J., Takayanagi H., IEEE Transactions on Applied Superconductivity . 1995,第2期

机译：在插入InAlAs / InGaAs MD结构的应变InAs量子阱中使用2DEG进行超导结
3. Effect of Strongly Mismatched GaAs and InAs Inserts in a InAlAs Buffer Layer on the Structural and Optical Properties of Metamorphic InAs(Sb)/InGaAs/InAlAs/GaAs Quantum-Confined Heterostructures [J] . Solovev V. A., Chernov M. Yu, Komkov O. S., JETP Letters . 2019,第6期

机译：强烈不匹配的GaAs和InAs在Inalas缓冲层中的影响在变质InAs（Sb）/ InGaAs / Inalas / GaAs量子限制异质结构的结构和光学性质上
4. Type II heterostructures with InSb quantum dots inserted into p-n InAs(Sb,P) junction [C] . K.D. Moiseev, rnYa.A. Parkhomenko, rnE.V. Ivanov, Quantum sensing and nanophotonic devices VII . 2010

机译：InSb量子点插入p-n InAs（Sb，P）结的II型异质结构
5. Optoelectronic devices based on low threshold strained InGaAs/GaAs quantum well lasers grown on structured substrates [D] . Frateschi, Newton Cesario 1993

机译：基于在结构化衬底上生长的低阈值应变InGaAs / GaAs量子阱激光器的光电器件
6. Comparative Study of Photoelectric Properties of Metamorphic InAs/InGaAs and InAs/GaAs Quantum Dot Structures [O] . Sergii Golovynskyi, Luca Seravalli, Oleksandr Datsenko, 2017

机译：变质InAs / InGaAs和InAs / GaAs量子点结构的光电性能比较研究
7. Erratum to: “Structural and electrical properties of InAlAs/InGaAs/InAlAs HEMT heterostructures on InP substrates with InAs inserts in quantum well” [O] . G. B. Galiev, A. L. Vasiliev, R. M. Imamov, 2015

机译：错误到：“InP衬底上的Inalas / InGaAs / Inalas HEMT异质结构的结构和电性能与inaS阱插入量”
8. Ultrafast Carrier Dynamics in an InAs/InGaAs Quantum Dots-in-a-Well Heterostructure. [R] . J. Urayama N. Weisse-Bernstein R. D. Averitt R. P. Prasankumar R. S. Attaluri 2008

机译：Inas / InGaas中的超快载流子动力学量子阱中的异质结构。

Superconducting junctions using 2DEG in a stained InAs quantum well inserted into an InAiAs/InGaAs MD structure

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