A.F. Ioffe Physico-Technical Institute, RAS, 26 Politekhnicheskaya, St. Petersburg, 194021, Russia;
rnA.F. Ioffe Physico-Technical Institute, RAS, 26 Politekhnicheskaya, St. Petersburg, 194021, Russia;
rnA.F. Ioffe Physico-Technical Institute, RAS, 26 Politekhnicheskaya, St. Petersburg, 194021, Russia;
rnA.F. Ioffe Physico-Technical Institute, RAS, 26 Politekhnicheskaya, St. Petersburg, 194021, Russia;
rnA.F. Ioffe Physico-Technical Institute, RAS, 26 Politekhnicheskaya, St. Petersburg, 194021, Russia;
rnA.F. Ioffe Physico-Technical Institute, RAS, 26 Politekhnicheskaya, St. Petersburg, 194021, Russia;
rnA.F. Ioffe Physico-Technical Institute, RAS, 26 Politekhnicheskaya, St. Petersburg, 194021, Russia;
rnA.F. Ioffe Physico-Technical Institute, RAS, 26 Politekhnicheskaya, St. Petersburg, 194021, R;
LPE; MOVPE; quantum dots; heterostructures; interface; I-V characteristics; transmission electron microscopy; electroluminescence; negative luminescence;
机译:InAs基质中具有Ⅱ型量子点InSb的窄带隙异质结构的磁光研究
机译:GaAsSb / InAs / GaAs量子点异质结构的I型II型能带对准受点尺寸和减应力层组成的影响
机译:基于n-InAs矩阵中InSb量子散列的II型断裂间隙异质结构中的高温界面电致发光
机译:II型异质结构,INSB量子点插入P-N INAS(SB,P)结
机译:InSb-InAs纳米线III型异质结的电学性质和能带图。
机译:在中红外光谱范围内通过全晶片光致发光映射探测II型InAs / GaInSb W形量子阱的亚单层均匀性
机译:InSb-InAs纳米线III型异质结构中的电子束感应电流
机译:sp3s和sp3d5s Gaas,aIa,Inas,Gasb,aIsb,Insb,Gap,aIp,Inp的紧束缚参数集,用于量子点模拟