MM and sub-MM properties of ramp-type Josephson junctions on MgO with STO buffer layers

摘要

We have successfully fabricated ramp-type junctions on MgO substrates using an SrTiO/sub 3/ (STO) buffer layer. The observed I/sub c/R/sub n/ product for the junctions on MgO with STO buffer layer were about 2 mV at 4.2 K and 0.1 mV at 60 K. The junctions clearly showed Shapiro steps under irradiation of MM-waves and sub-MM-waves. We observed Josephson emission at 50 GHz from a junction on a MgO substrate with STO buffer layer at 17 K. We have also confirmed mixing in the self-oscillating mode using MM-wave and sub-MM-wave signals.