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Thermally Assisted Transition in Thin Film Based FCL: A Way to Speed Up the Normal Transition Across the Wafer

机译:基于薄膜的FCL中的热辅助过渡:一种加速晶片上正常过渡的方法

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The adjunction of constrictions along the meander of a superconducting Fault Current Limiter (FCL) greatly improves its behavior thanks to a better distribution of the dissipative zones at the occurrence of a short circuit. This design works perfectly for symmetrical short circuit (i.e. short circuit at the maximum voltage). However for asymmetrical short circuits (at voltages close to 0), we are facing a problem due to the small number of the initially switched constrictions. To solve this problem, we test the possibility to speed up the transition into the normal state of the whole meander by heating it locally. This thermally assisted transition is realized by growing a gold layer on the backside of the substrate and by patterning it into a meander with its dissipative parts lying just underneath the constrictions of the FCL. This gold meander can be either connected in parallel with the superconducting meander or a capacitor bank can supply the current. In order to confirm the benefit of the thermally assisted transition we have carefully measured the behavior of the FCL during constant current and low voltage pulses as a function of the power injected into the gold line. We present results showing that the response of the FCL to the generated heat is very fast; typically less than 100 $mu{rm s}$. Furthermore the distribution of the dissipated power across the wafer, during asymmetrical AC short circuit, is clearly improved.
机译:由于在发生短路时耗散区的分布更好,所以沿超导故障限流器(FCL)的曲折处的收缩部可以大大改善其性能。此设计非常适合对称短路(即最大电压下的短路)。但是,对于非对称短路(在接近0的电压下),由于最初切换的缩颈数量少,我们面临一个问题。为了解决这个问题,我们测试了通过局部加热加快整个曲折过渡到正常状态的可能性。这种热辅助过渡是通过在基板背面生长金层并将其构图成蜿蜒曲折的方式实现的,其耗散部分位于FCL缩颈下方。该金曲折线可以与超导曲折线并联连接,也可以通过电容器组提供电流。为了确认热辅助过渡的好处,我们仔细测量了恒定电流和低压脉冲期间FCL的行为,该行为取决于注入金线的功率。我们提供的结果表明,FCL对产生的热量的响应非常快。通常少于100 $ mu {rm s} $。此外,在不对称的交流短路期间,整个晶片上的耗散功率分布得到了明显改善。

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