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Polycrystalline ${rm MgB}_{2}$ Films on Flexible YSZ Substrates Grown by Hybrid Physical-Chemical Vapor Deposition

机译:混合物理化学气相沉积法在柔性YSZ衬底上沉积多晶$ {rm MgB} _ {2} $薄膜

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摘要

We report properties of polycrystalline ${rm MgB}_{2}$ films deposited on thin flexible yttium-stabilized zirconia (YSZ) substrates by hybrid physical-chemical vapor deposition. The ${rm MgB}_{2}$ films show a transition temperature of 38.9 K with a narrow superconducting transition (0.1 K). The self-field critical current density in the films reaches $10^{7} {rm A/cm}^{2}$ at low temperatures. These properties do not change after repeated bending over a radius of 10 mm. Low microwave surface resistance comparable to those obtained in epitaxial ${rm MgB}_{2}$ films on single-crystalline sapphire substrate was observed. The result shows promise of polycrystalline ${rm MgB}_{2}$ films for applications in superconducting digital circuits as well as in coated conductor wires.
机译:我们报告了通过混合物理化学气相沉积在薄的柔性flexible稳定氧化锆(YSZ)衬底上沉积的多晶$ {rm MgB} _ {2} $薄膜的特性。 $ {rm MgB} _ {2} $膜的过渡温度为38.9 K,超导过渡温度很窄(0.1 K)。薄膜中的自电场临界电流密度在低温下达到$ 10 ^ {7} {rm A / cm} ^ {2} $。在重复弯曲10毫米半径后,这些特性不会改变。观察到与在单晶蓝宝石衬底上的外延$ {rm MgB} _ {2} $膜中获得的微波表面电阻相当的低微波表面电阻。结果表明多晶$ {rm MgB} _ {2} $薄膜有望用于超导数字电路以及涂层导线中。

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