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首页> 外文期刊>Physica, C. Superconductivity and its applications >Superconductivity of epitaxial MgB2 thick films and MgB2 nanowires grown by hybrid physical-chemical vapor deposition
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Superconductivity of epitaxial MgB2 thick films and MgB2 nanowires grown by hybrid physical-chemical vapor deposition

机译:通过混合物理化学气相沉积法生长的外延MgB2厚膜和MgB2纳米线的超导性

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摘要

We have fabricated epitaxial MgB2 thick films and MgB2 nanowires by using hybrid physical-chemical vapor deposition (HPCVD) technique. Mg pellet and B2H6 gas were used as source substances. We used a special susceptor with a susceptor cap in order to obtain a high magnesium vapor pressure around the substrate. We were able to achieve very high growth rate of 0.17 mu m/min. MgB2 thick films and MgB2 nanowires were grown on Al2O3 substrates at a low temperature. X-ray diffraction patterns showed epitaxial growth of MgB2 thick films. Columnar structures of epitaxial MgB2 thick films were observed by cross-sectional view transmission electron microscope (TEM) images. For the 1.7 mu m thick film, the T-c was observed to be 40.5 K with a J(c) of 1.5 x 10(6) A/cm(2) at 30 K. The MgB2 nanowire observed by using scanning electron microscope (SEM) was 70-100 nm in diameter and 1-3 pro in length. A focused ion beam (FIB) was used to fabricate MgB2 nano-bridge pattern on the MgB2 thin film, The Superconductivity of the MgB2 nanowire was confirmed by using resistivity measurements.
机译:我们已经使用混合物理化学气相沉积(HPCVD)技术制造了外延MgB2厚膜和MgB2纳米线。镁颗粒和B2H6气体用作原料。我们使用带有基座盖的特殊基座,以便在基材周围获得较高的镁蒸气压。我们能够实现0.17微米/分钟的极高增长率。 MgB2厚膜和MgB2纳米线在低温下在Al2O3衬底上生长。 X射线衍射图表明MgB2厚膜的外延生长。通过横截面透射电子显微镜(TEM)图像观察了外延MgB2厚膜的柱状结构。对于1.7微米厚的薄膜,在30 K下观察到Tc为40.5 K,J(c)为1.5 x 10(6)A / cm(2)。使用扫描电子显微镜(SEM)观察MgB2纳米线直径为70-100 nm,长度为1-3 pro。使用聚焦离子束(FIB)在MgB2薄膜上制作MgB2纳米桥图案,通过电阻率测量确定MgB2纳米线的超导性。

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