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Magnetic properties of Er-doped ZnO films prepared by reactive magnetron sputtering

机译:反应磁控溅射制备掺ErZnO薄膜的磁性

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All Zn1−x Er x O (x=0.04, 0.05, and 0.17) films deposited on glass substrates by radio-frequency reactive magnetron sputtering exhibit the mixture of ferromagnetic and paramagnetic phases at room temperature. The estimated magnetic moment per Er ion decreases with the increase of Er concentration. The temperature dependence of the magnetization indicates that there is no intermetallic ErZn buried in the films. The ferromagnetism is attributed to the Er ions substitution for Zn2+ in ZnO lattices, and it can be interpreted by the bound-magnetic-polaron model.
机译:通过射频反应磁控溅射沉积在玻璃基板上的所有Zn 1-x Er x x(x = 0.04、0.05和0.17)膜均显示出铁磁和铁磁的混合物在室温下为顺磁相。随着Er浓度的增加,每个Er离子的估计磁矩减小。磁化强度的温度依赖性表明,薄膜中没有埋藏金属间ErZn。铁磁性归因于ZnO晶格中Zn 2 + 的Er离子替代,可以用束缚磁极化子模型解释。

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