Electrical characterization of organic resistive memory with interfacial oxide layers formed by O2 plasma treatment

摘要

We studied organic resistive memory devices with interfacial oxide layers, the thickness of which depended on O2 plasma treatment time. The different interfacial oxide thicknesses sequentially changed the ON and OFF states of the final memory devices. We found that the memory devices that had undergone additional plasma treatment showed higher ON/OFF ratios than devices without the treatment, which was due to the relatively large OFF resistance values. However, a long oxidation process widened the threshold voltage distribution and degraded the switching reproducibility. This indicates that the oxidation process should be carefully optimized to provide practical high-performance organic memory.