Electrical characterization of organic resistive memory with interfacial

摘要

We studied organic resistive memory devices with interfacial oxide layers, the thickness of whichndepended on O2 plasma treatment time. The different interfacial oxide thicknesses sequentiallynchanged the ON and OFF states of the final memory devices.We found that the memory devices thatnhad undergone additional plasma treatment showed higher ON/OFF ratios than devices without thentreatment, which was due to the relatively large OFF resistance values. However, a long oxidationnprocess widened the threshold voltage distribution and degraded the switching reproducibility.nThis indicates that the oxidation process should be carefully optimized to provide practicalnhigh-performance organic memory. © 2010 American Institute of Physics. u0004doi:10.1063/1.3478840