Temperature induced in-plane/out-of-plane magnetization transition in ferromagnetic Ga0.93Mn0.07As0.94P0.06/(100)GaAs thin films

摘要

Phosphorous alloying in the y=0.06 range allows to engineer ferromagnetic Ga1-xMnxAs1-yPy/(100)GaAs thin films with standard x=0.07 Mn doping in which the easy axes of magnetization can be changed from in-plane to out-of-plane by a small (10 K) temperature rise. Ferromagnetic resonance investigations show the reorientation to be induced by the different temperature dependence of the cubic and uniaxial anisotropy constants.