IN-PLANE MAGNETIZED FILM, IN-PLANE MAGNETIZED FILM MULTILAYER STRUCTURE, HARD BIAS LAYER, MAGNETORESISTANCE EFFECT ELEMENT, AND SPUTTERING TARGET

摘要

Provided is an in-plane magnetized film with which magnetic performance such as a coercive force Hc of at least 2.00 kOe and a residual magnetization Mrt per unit area of at least 2.00 memu/cm2 can be achieved without performing heating-type film formation.　This in-plane magnetized film used as a hard bias layer (14) of a magnetoresistance effect element (12) contains metal Co, metal Pt, and an oxide and has a thickness of 20-80 nm, wherein: 45-80 at% of the metal Co and 20-55 at% of the metal Pt are contained with respect to the total amount of the metal components of said in-plane magnetized film; 3-25 vol% of the oxide is contained with respect to the whole in-plane magnetized film; and the average grain diameter of magnetic crystal grains of said in-plane magnetized film in the in-plane direction is 15-30 nm.