IN-PLANE MAGNETIZED FILM, IN-PLANE MAGNETIZED FILM MULTILAYER STRUCTURE, HARD BIAS LAYER, MAGNETORESISTIVE ELEMENT, AND SPUTTERING TARGET

摘要

Provided is a CoPt-oxide-based in-plane magnetized film which has a magnetic coercive force Hc of 2.00 kOe or more and has remanent magnetization Mrt per unit area of 2.00 memu/cm² or more. An in-plane magnetized film (10) for use as a hard bias layer (14) in a magnetoresistive element (12), which contains metal Co, metal Pt and an oxide, wherein the metal Co and the metal Pt are contained in amounts of 55 at% or more and less than 95 at% and more than 5 at% and 45 at% or less, respectively, relative to the total amount of the metal components in the in-plane magnetized film (10), the oxide is contained in an amount of 10 to 42 vol% inclusive relative to the whole amount of the in-plane magnetized film (10), and the thickness is 20 to 80 nm inclusive.