In-plane magnetization film, in-plane magnetized film multilayer structure, hard bias layer, and magnetoresistive element

摘要

Problem to be solved: to provide an in-plane magnetization film capable of achieving a magnetic performance in which the coercive force HC is above 2.00 kOe or more and the remanent magnetization MRT per unit area is 2.00 memu / cm2 or more, and can be achieved without heating.A solution is formed on the base filmAn in-plane magnetization film 10 used as the hard bias layer 14 of the magnetoresistive element 12;Contains metal Pt and oxideThe thickness is 20 nm to 80 nm or less.For the sum of the metal components of the in-plane magnetization filmThe metal Pt contains 20 at% or more 55The inclination of the transition of the PT amount in the boundary region from the base film 40 to the in-plane magnetization film 10 is 8 (1 / nm) or more.Diagram