N-channel carbon nanotube enabled vertical field effect transistors with solution deposited ZnO nanoparticle based channel layers

摘要

N-channel carbon nanotube enabled vertical field effect transistors (CN-VFETs) exploiting a solution deposited ZnO nanoparticle thin film as the channel material are demonstrated. Transistor performance benefits from a thermal anneal followed by an oxygen plasma treatment. The devices exhibit on/off ratios approaching 104 with output current densities exceeding 60 mA/cm2. Combined with p-channel organic CN-VFETs, the solution based processing could allow for the development of low-cost complementary circuits.