Investigation of electromigration in In2Se3 nanowire for phase change memory devices

摘要

The decomposition of In2Se3 nanowire phase change memory devices during current-driving operation was investigated. The devices were subjected to thermal/electrical stress with current density and electric field during the reset operation at 0.24–0.38 MA/cm2 and 5.3–6.4 kV/cm, respectively. After multiple operation cycles, a change in morphology and composition of the In2Se3 nanowire was observed and led to the device failure. The transmission electron microscopy and energy dispersive analysis indicate that electromigration causes the catastrophic failure by void formation where In atoms migrate toward the cathode and Se atoms migrate toward the anode depending on their electronegativities.