机译:用于相变存储器件的ln_2Se_3纳米线中的电迁移研究
Department of Electrical Engineering, Pohang University of Science and Technology, Pohang, South Korea;
Creative IT Engineering, Pohang University of Science and Technology, Pohang, South Korea;
Creative IT Engineering, Pohang University of Science and Technology, Pohang, South Korea;
NASA Ames Research Center, Moffett Field, California 94035, USA;
Department of Electrical Engineering, Pohang University of Science and Technology, Pohang, South Korea,Division of IT Convergence Engineering, Pohang University of Science and Technology, Pohang, South Korea;
机译:In2Se3纳米线中用于相变存储器件的电迁移研究
机译:真空绝缘自对准纳米线相变存储器件
机译:相变GeTe和Ge2Sb2Te5纳米线器件中存储切换现象的比较研究
机译:使用Bi2Te3纳米线的集成相变存储设备
机译:相变存储器设备中的瞬态相位变化效果
机译:重新定义AgInSbTe器件的时间分辨陡峭阈值切换动力学揭示的相变存储器的速度极限
机译:相变存储器件中的瞬态相变效应
机译:相变存储器件用纳米结构电极的热性质