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Methods of manufacturing phase-change random access memory devices with phase-change nanowire formation using single element
Methods of manufacturing phase-change random access memory devices with phase-change nanowire formation using single element
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机译:使用单元素制造具有相变纳米线形成的相变随机存取存储器件的方法
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摘要
A PRAM device includes a lower electrode, a phase-change nanowire and an upper electrode. The phase-change nanowire may be electrically connected to the lower electrode and includes a single element. The upper electrode may be electrically connected to the phase-change nanowires.
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