Electrical phase transition characteristics of self-assembled In2Se3 nanowire-based phase-change random access memory are presented. Through repeatable phase switching behavior in In2Se3 nanowire, we explored critical device parameters, such as set/reset programming voltage, extremely high resistance ratio (~107), power consumption, thermal resistance by Fourier's law, resistance drift coefficient by power law, etc. Size-dependent properties were observed: a systematic reduction in set/reset voltage and programming power, increase in thermal resistance of amorphous/crystalline phases and decrease in resistance drift coefficient at reset state, all scaling down the nanowire diameter. Such investigations provide an opportunity to develop highly-scalable and thermally efficient nonvolatile memory architecture in the future.
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机译:提出了基于In 2 sub> Se 3 sub>纳米线的自组装相变随机存取存储器的电相变特性。通过In 2 sub> Se 3 sub>纳米线中可重复的相位切换行为,我们探索了关键的器件参数,例如设置/重置编程电压,极高的电阻比(〜10 7 sup>),功耗,傅里叶定律的热阻,幂律的电阻漂移系数等。观察到了尺寸相关的特性:置位/复位电压和编程功率的系统性降低,非晶态的热阻增加晶相和复位状态下电阻漂移系数的降低,均缩小了纳米线的直径。这样的研究为将来开发高度可扩展且热效率高的非易失性存储器架构提供了机会。
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