Stabilizing resistive switching performances of TiN/MgZnO/ZnO/Pt heterostructure memory devices by programming the proper compliance current

摘要

In this work, amorphous MgZnO/ZnO heterostructure films were deposited on Pt/TiO2/SiO2/Si at room temperature. By programming the proper compliance current, bipolar resistive switching performances of TiN/MgZnO/ZnO/Pt devices were stabilized; the dispersion of switching voltages and resistance states of devices were suppressed simultaneously. In view of filamentary model, the elimination of secondary and multiple nanofilaments in higher compliance current was suggested to be responsible for the observed improvement. Furthermore, the good endurance and retention behaviors of the optimized TiN/MgZnO/ZnO/Pt devices were confirmed, ensuring its potential application for resistive random access memory. This simple optimizing method by programming proper compliance current is promising for resistive switching devices required avoiding damage.