Multi-step resistive switching behavior of Li-doped ZnO resistance random access memory device controlled by compliance current

摘要

The multi-step resistive switching (RS) behavior of a unipolar Pt/Li_(0.06)Zn_(0.94)O/Pt resistive random access memory (RRAM) device is investigated. It is found that the RRAM device exhibits normal, 2-, 3-, and 4-step RESET behaviors under different compliance currents. The transport mechanism within the device is investigated by means of current-voltage curves, in-situ transmission electron microscopy, and electrochemical impedance spectroscopy. It is shown that the ion transport mechanism is dominated by Ohmic behavior under low electric fields and the Poole-Frenkel emission effect (normal RS behavior) or Li~+ ion diffusion (2-, 3-, and 4-step RESET behaviors) under high electric fields.