Metal-insulator transition and electrically driven memristive characteristics of SmNiO3 thin films

摘要

The correlated oxide SmNiO3 u0002SNOu0003 exhibits an insulator to metal transition u0002MITu0003 at 130 °C innbulk form. We report on synthesis and electron transport in SNO films deposited on LaAlO3 u0002LAOu0003nand Si single crystals. X-ray diffraction studies show that compressively strained single-phase SNOngrows epitaxially on LAO while on Si, mixed oxide phases are observed. MIT is observed innresistance-temperature measurements in films grown on both substrates, with charge transportnin-plane for LAO/SNO films and out-of-plane for Si/SNO films. Electrically driven memristivenbehavior is realized in LAO/SNO films, suggesting that SNO may be relevant for neuromorphicndevices.