Metal-insulator transition and electrically driven memristive characteristics of SmNiO_3 thin films

摘要

The correlated oxide SmNiO_3 (SNO) exhibits an insulator to metal transition (MIT) at 130 ℃ in bulk form. We report on synthesis and electron transport in SNO films deposited on LaAlO_3 (LAO) and Si single crystals. X-ray diffraction studies show that compressively strained single-phase SNO grows epitaxially on LAO while on Si, mixed oxide phases are observed. MIT is observed in resistance-temperature measurements in films grown on both substrates, with charge transport in-plane for LAO/SNO films and out-of-plane for Si/SNO films. Electrically driven memristive behavior is realized in LAO/SNO films, suggesting that SNO may be relevant for neuromorphic devices.