High quantum efficiency mid-wavelength infrared type-Ⅱ InAs/InAs_(1-x)Sb_x superlattice photodiodes grown by metal-organic chemical vapor deposition

摘要

We report the growth and characterization of mid-wavelength infrared type-II InAs/InAs1-xSx superlattice photodiodes on GaSb substrates grown by metal-organic chemical vapor deposition. At 150 K, the 50% cut-off wavelength is 5.0 mu m, the dark current density is 3.3 x 10(-4) A/cm(2) under -20 my bias, and the peak responsivity is 1.76 A/W corresponding to a quantum efficiency of 55% without anti-reflection coating. A specific detectivity of 1.2 x 10(11)cm Hz(1/2)/W is achieved at 4.0 mu m under -20 mV bias at 150 K. Published under license by AIP Publishing.