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Annealing effect and interlayer modulation on magnetic damping of CoFeB/interlayer/Pt thin films

机译:CoFeB /中间层/ Pt薄膜磁阻尼的退火效应和层间调制

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摘要

The annealing effect and interlayer (IL) modulation on the magnetic damping properties of CoFeB/IL/Pt (IL = Ta or Ru) multilayers have been systematically studied by the time-resolved magneto-optical Kerr effect. It is found that after inserting a thin IL, the saturated magnetic damping factor alpha(s) drops considerably due to the reduced spin pumping effect. By fitting the curves of alpha(s) versus IL thickness, spin diffusion lengths of Ta and Ru are determined to be 3.07 and 3.59 nm, respectively. Interestingly, for the CoFeB samples with different capping layers of Pt, Ta/Pt, or Ru/Pt, the alpha(s) values exhibit an identical non-monotonic variation tendency alpha(s) annealing temperature (T-a) increases. It first rises to a maximum at Ta similar to 100 degrees C and then decreases, reaching a minimum value (alpha(s) = 0.021-0.011) at T-a similar to 300 degrees C. After that, alpha(s) starts to increase again. Such a complicated variation behavior is attributed to two-magnon scattering contribution, which originates from the change in the CoFeB surface roughness and interfacial atomic intermixing induced by thermal annealing. This study provides a deep understanding and effective control of magnetic damping for practical design of high performance spintronic devices. Published by AIP Publishing.
机译:通过时间分辨的磁光克尔效应,系统地研究了退火效应和层间(IL)调制对CoFeB / IL / Pt(IL = Ta或Ru)多层膜的磁阻尼性能的影响。已经发现,在插入薄的IL之后,由于自旋泵浦效应的降低,饱和磁阻尼系数α(s)大大降低。通过拟合α对IL厚度的曲线,可以确定Ta和Ru的自旋扩散长度分别为3.07和3.59nm。有趣的是,对于具有不同的Pt,Ta / Pt或Ru / Pt覆盖层的CoFeB样品,α值显示出相同的非单调变化趋势,α退火温度(T-a)升高。它首先在类似于100摄氏度的Ta处上升到最大值,然后减小,在类似于300摄氏度的Ta处达到最小值(alpha = 0.021-0.011)。此后,alpha再次开始增加。这种复杂的变化行为归因于两磁子散射,这是由于CoFeB表面粗糙度的变化和热退火引起的界面原子混合而引起的。这项研究为高性能自旋电子器件的实际设计提供了对磁阻尼的深刻理解和有效控制。由AIP Publishing发布。

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  • 来源
    《Applied Physics Letters》 |2018年第22期|222403.1-222403.5|共5页
  • 作者单位

    Yunnan Univ, Sch Phys & Astron, Kunming 650091, Yunnan, Peoples R China;

    Fudan Univ, Shanghai Ultraprecis Opt Mfg Engn Ctr, Dept Opt Sci & Engn, Key Lab Micro & Nano Photon Struct,Minist Educ, Shanghai 200433, Peoples R China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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