InGaAs/AlAsSb quantum cascade lasers

摘要

The In_(0.53)Ga_(0.47)As/AlAs_(0.56)Sb_(0.44) heterostructure system is of significant interest for the development of high-performance intersubband devices due to its very large conduction band offset (ΔE_(c)～1.6 eV) and lattice-matched compatibility with well-established InP-based waveguide technology. In this letter, we report the realization of In_(0.53)Ga_(0.47)As/AlAs_(0.56)Sb_(0.44) quantum cascade lasers emitting at λ～4.3 μm. The highest-performance devices have low-temperature (20 K) threshold currents of ～6 kA/cm~(2) and display laser action up to a maximum temperature of 240 K, with a characteristic temperature of T_(0)～150 K.