简要报道了自行研制的InGaAs/InAlAs量子级联激光器 的制备及其主要特性.该器件具有增强型脊型波导结构,在80K时阈值电流为0.5A,相应的 阈值电流密度为5KA/cm2.%The preparation and main characteristics of the InGaAs/InAlAs quantum cascade laser were given. The device has a reinforced rid ge waveguide structure. The threshold current obtained at 80K is about 0.5A, an d the corresponding threshold current density is about 5kA/cm2.
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