首页> 外文期刊>Applied Physics Letters >A simple method for the preparation of transparent p-type Ca-doped CuInO2 films: Pulsed-laser deposition from air-sintered Ca-doped Cu2In2O5 targets
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A simple method for the preparation of transparent p-type Ca-doped CuInO2 films: Pulsed-laser deposition from air-sintered Ca-doped Cu2In2O5 targets

机译:一种制备透明的p型掺杂Ca的CuInO2薄膜的简单方法:从空气烧结的掺杂Ca的Cu2In2O5靶材进行脉冲激光沉积

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摘要

We report the deposition of single-phase undoped and Ca-doped CuInO2 thin films from a readily synthesized source target of Cu2In2O5-circumventing the very difficult fabrication of CuInO2 targets. X-ray diffraction shows that single-phase materials were obtained over a range of substrate temperatures and deposition pressures. p-type conductivities are measured to be similar to3x10(-3) S/cm, comparable to the best films previously reported. The optical properties of the films were measured by spectroscopic ellipsometry. (C) 2004 American Institute of Physics.
机译:我们报告了从易于合成的Cu2In2O5的源靶材沉积单相无掺杂和Ca掺杂的CuInO2薄膜,从而避免了非常困难的CuInO2靶材的制造。 X射线衍射表明,在一定范围的基板温度和沉积压力下获得了单相材料。测量的p型电导率类似于3x10(-3)S / cm,可与之前报道的最佳薄膜相媲美。膜的光学性质通过光谱椭圆偏振法测量。 (C)2004美国物理研究所。

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