Band offset design with quantum-well gate insulating structures

摘要

The authors propose a concept, a nanoscaled quantum-well gate insulating structure. The effective conduction band offset (DeltaE(c)) can be controlled with an appropriate combination of high-K and high-DeltaE(c) materials. The electronic structures of SrTiO3 and Sr2TiO4 were studied by means of first-principles calculations to investigate the change in the band structures induced by SrO-layer intercalation. The DeltaE(c) of Sr2TiO4 is raised by about +0.8 eV. A quantum-well gate insulating structure with off-resonance condition is also proposed. The DeltaE(c) becomes as high as the barrier height of the barrier material. (C) 2004 American Institute of Physics.