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Threading dislocation generation in epitaxial (Ba,Sr)TiO_(3) films grown on (001) LaAlO_(3) by pulsed laser deposition

机译:通过脉冲激光沉积在(001)LaAlO_(3)上生长的(Ba,Sr)TiO_(3)外延薄膜中产生螺纹位错

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摘要

Epitaxial Ba_(0.6)Sr_(0.4)TiO_(3) films were grown onto (001) LaAlO_(3) by pulsed-laser deposition, and the dislocation structures of the films were investigated using transmission electron microscopy. Misfit dislocations with a periodicity of about 7 nm and Burgers vectors b=a〈100〉 were observed at the interface. A high density of threading dislocations was present the films and these also had b=a〈100〉. The data indicate that the threading dislocations are not generated as the result of half-loop climb from the deposit surface as proposed previously, but are instead formed when misfit dislocations are forced away from the interface during island coalescence.
机译:通过脉冲激光沉积在(001)LaAlO_(3)上生长外延Ba_(0.6)Sr_(0.4)TiO_(3)薄膜,并使用透射电子显微镜研究了薄膜的位错结构。在界面处观察到错配位错的周期约为7 nm,并且Burgers向量b = a <100>。薄膜存在高密度的位错,并且这些薄膜也具有b = a <100>。数据表明,螺纹错位不是如先前提出的那样从沉积物表面进行半环爬升而产生的,而是当在岛聚结期间将失配位错从界面上移开时形成的。

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