Thermoelectric properties of InSb and Ga_(0.03)In_(0.97)Sb thin films grown by metalorganic vapor-phase epitaxy

摘要

We studied the thermoelectric properties of InSb and Ga_(0.03)In_(0.97)Sb thin films grown by metalorganic vapor-phase epitaxy targeting a thermoelectric device with a high electron mobility. For InSb on sapphire, the maximum power factor (P_f) was 3.5 X 10~(-3) W/mK at 723 K, and for InSb on SiO_2 glass, the maximum P_f was 2.4 X 10~(-3) W/mK at 723 K. For Ga_(0.03)In_(0.97)Sb on sapphire, the maximum P_f was 2.5 X 10~(-3) W/mK at 723 K, and for Ga_(0.03)In_(0.97)Sb on SiO_2 glass, the maximum P_f was 3.4 X 10~(-3) W/mK at 723 K.